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BUZ11_NR4941

Manufacturer:

On Semiconductor

Mfr.Part #:

BUZ11_NR4941

Datasheet:
Description:

MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 75 W 50 V Continuous Drain Current (ID):30 A

ParameterValue
Length10.67 mm
Width4.83 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height16.51 mm
PackagingTube
Lead FreeLead Free
RoHSCompliant
PolarityNPN
REACH SVHCNo SVHC
Weight1.8 g
Contact PlatingTin
Number of Elements1
Lifecycle StatusProduction (Last Updated: 5 months ago)
Max Power Dissipation75 W
Power Dissipation75 W
Threshold Voltage3 V
Number of Channels1
Input capacitance2 nF
Continuous Drain Current (ID)30 A
Rds On Max40 mΩ
Drain to Source Voltage (Vdss)50 V
Turn-On Delay Time30 ns
Turn-Off Delay Time180 ns
Element ConfigurationSingle
Rise Time70 ns
Drain to Source Resistance40 mΩ
Nominal Vgs3 V
Gate to Source Voltage (Vgs)-20 V, 20 V
Drain to Source Breakdown Voltage (Vds)50 V
Schedule B8541290080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 months ago)
Gate to Source Threshold Voltage2.1 V
FET Type(Transistor Polarity)N-Channel

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